The exchange bias effeet has broad application prospeets in spintronie devices sueh as magnetierandom aecess memory and magnetie tunnel juneions.In this paper,a two-dimensional van der Waalsferromagnetie/antiferromagnetic Fe3GeTe2/Fe1/3NbS, heterostrueture device was construeted,and the exchangebias effect of the device was systematically investigated through the anomalous Hall elect measurements.Theresults show that there is an exehange bias effeet at the interaee of the heterostruetures deviee prepared , andthe exchange bias fiehd(HEX) gradually deereases with inereasing temperature,And the blocking temperature is about 40K.In addition ,by changing the thickness of Fe3GeTe2,the exchange bias field in the Fe3GeTe2/Fe1/3 NbS2 heterostructure was modulated ,with a maximum |HEX| of 4000e.The exchange bias field showed a trendof first inereasing and then deereasing with the increase in the thickness of the ferromagnetie layer.