With the advaneement of mieroelectronies technology towards the nanoscale, the development ofhigh-perforance dielectric materials has become the key to improving the performance of integrated circuits Atomic Layer Deposition (ALI) technology shows great potential in the preparation of high-performance Al2O3 lielectric materials due to its exeellent film uniformity , precise thickness control, and good interface properties. It focuses on the experimental teaching content of ALD method for preparing Al2O3 high-performance dielectricmaterials is designed for related majors such as microelectronies science and engineering and integrated circuits. By introducing the principles of ALD deposition technology, knowledge related to Al2O3 dielectricfilms, experimental operation procedures, characterization and analysis of Al2O3 dieleetrie films and otherprocess designs.lt aims to cultivate and improve students’ practical and innovative abilities.